FDN306P

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : - 12 V
Resistance Drain-Source RDS (on) : 0.04 Ohms
Package / Case : SuperSOT
Continuous Drain Current : 2.6 A


Features:

*  2.6 A,  12 V.  R _DS(ON) = 40 m @ V_GS = 4.5 V
                               R _DS(ON) = 50 m @ V_GS = 2.5 V
                               R _DS(ON) = 80 m @ V_GS = 1.8 V
* Fast switching speed 
* low R _DS(ON) 
* SuperSOT^TM  -3 provides low R _DS(ON)  and 30% higher power handling capability than SOT23 in the same footprint


Application

*  Battery management 
*  Load switch
*  Battery protection


Specifications

 

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-12	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current  - Continuous               (Note 1a)                         - Pulsed	-2.6	A
		-10
PD	Maximum Power Dissipation            (Note 1a)                                                         (Note 1b)	0.5	W
		0.46
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

This FDN306P P-Channel 1.8V specified MOSFET uses  Fairchild's advanced low voltage PowerTrench process.  It has been optimized for battery power management  applications.  


Parameters:

Technical/Catalog Information	FDN306P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25° C	2.6A
Rds On (Max) @ Id, Vgs	40 mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) @ Vds	1138pF @ 6V
Power - Max	460mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN306P FDN306P FDN306PTR ND FDN306PTRND FDN306PTR