FDN308P

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 1.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SuperSOT
Resistance Drain-Source RDS (on) : 0.086 Ohms


Features:

*  20 V,  1.5 A.  R _DS(ON) = 125 m @ V_GS = 4.5 V
                               R _DS(ON) = 190 m @ V_GS = 2.5 V 
*  Fast switching speed 
*  High performance trench technology for extremely  low R _DS(ON) 
*  SuperSOT^TM  -3 provides low R _DS(ON)  and 30% higher  power handling capability than SOT23 in the same  footprint


Application

*  Power management
*  Load switch
*  Battery protection 
 


Specifications

 

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current  - Continuous               (Note 1a)                         - Pulsed	-1.5	A
		-10
PD	Maximum Power Dissipation              (Note 1a)                                                           (Note 1b)	0.5	W
		0.46
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

This FDN308P P-Channel 2.5V specified MOSFET uses a rugged  gate version of Fairchild's advanced PowerTrench  process.  It has been optimized for power management  applications with a wide range of gate drive voltage  (2.5V 12V).


Parameters:

Technical/Catalog Information	FDN308P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	125 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds	341pF @ 10V
Power - Max	460mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5.4nC @ 4.5V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN308P FDN308P