FDN359BN Selling Leads, Price trend , Fairchild Semiconductor, FDN359BN DataSheet download, circuit diagram from SeekIC.com

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FDN359BN: MOSFET 30V N-Channel PowerTrench MOSFET

FDN359BN Data Sheet

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Part Number:: FDN359BN
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

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Upload time: 2025/12/5

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Recent History
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MOSFET SSOT-3 P-CH 1.8V

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	2.7 A
Resistance Drain-Source RDS (on) :	46 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SuperSOT	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 2.7 A
Package / Case : SuperSOT
Resistance Drain-Source RDS (on) : 46 mOhms

Parameters:

Technical/Catalog Information	FDN359BN
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	2.7A
Rds On (Max) @ Id, Vgs	46 mOhm @ 2.7A, 10V
Input Capacitance (Ciss) @ Vds	650pF @ 15V
Power - Max	460mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	7nC @ 5V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN359BN FDN359BN FDN359BNDKR ND FDN359BNDKRND FDN359BNDKR

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FDN359BN

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