FDN361AN

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SSOT-3
Continuous Drain Current : 1.8 A
Resistance Drain-Source RDS (on) : 0.072 Ohms


Features:

* 1.8 A, 30 V. R _DS(on) = 0.100 @ V_GS = 10 V
                      R _DS(on)   = 0.150 @V_GS = 4.5 V.
* Low gate charge ( 2.1nC typical ).
* Fast switching speed.
* High performance trench technology for extremely low R _DS(on)
* High power version of  industry standard SOT-23  package. Identical pin out to  SOT-23 with 30% higher power handling capability.


Application

* DC/DC converter
* Load switch
* Motor drives


Specifications

 

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current  - Continuous                  (Note 1a)   - Pulsed	-1.8	A
		8
PD	Power Dissipation for Single Operation (Note 1a)   (Note 1b)	0.5	W
		0.46
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

This FDN361AN N-Channel Logic Level  MOSFET is produced using Fairchild Semiconductor's  PowerTrench process that has been especially  tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.


Parameters:

Technical/Catalog Information	FDN361AN
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	1.8A
Rds On (Max) @ Id, Vgs	100 mOhm @ 1.8A, 10V
Input Capacitance (Ciss) @ Vds	220pF @ 15V
Power - Max	460mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4nC @ 5V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN361AN FDN361AN