MOSFET SSOT-3 N-CH 30V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 1.8 A | ||
Resistance Drain-Source RDS (on) : | 0.072 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-3 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
-30 |
V |
VGSS |
Gate-Source Voltage |
±20 |
V |
ID |
Drain Current - Continuous (Note |
-1.8 |
A |
8 | |||
PD |
Power Dissipation for Single Operation (Note |
0.5 |
W |
0.46 | |||
TJ, Tstg |
Operating and |
-55 to +150 |
|
Technical/Catalog Information | FDN361AN |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 1.8A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 1.8A, 10V |
Input Capacitance (Ciss) @ Vds | 220pF @ 15V |
Power - Max | 460mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 4nC @ 5V |
Package / Case | SSOT-3 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDN361AN FDN361AN |