FDN371N

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SSOT-3
Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 22 m Ohms


Features:

2.5 A, 20 V.  R _DS(ON) = 50  m @ V_GS = 4.5 V
                    R _DS(ON) = 60  m @ V_GS = 2.5 V 
Low gate charge  (7.6 nC typical)
Fast switching speed
High performance trench technology for extremely low R _DS(ON)

 

Application

Load switch
Battery protection
Power management

Specifications

 

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current  - Continuous                  (Note 1a)   - Pulsed	2.5	A
		10
PD	Power Dissipation for Single Operation (Note 1a)   (Note 1b)	0.5	W
		0.46
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

This FDN371N 20V N-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.


Parameters:

Technical/Catalog Information	FDN371N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.5A
Rds On (Max) @ Id, Vgs	50 mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) @ Vds	815pF @ 10V
Power - Max	460mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10.7nC @ 4.5V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN371N FDN371N