FDN372S

MOSFET 30V N-Ch PowerTrench

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SeekIC No. : 00162608 Detail

FDN372S: MOSFET 30V N-Ch PowerTrench

floor Price/Ceiling Price

Part Number:
FDN372S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 2.6 A
Resistance Drain-Source RDS (on) : 40 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SuperSOT Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 40 mOhms
Package / Case : SuperSOT
Continuous Drain Current : 2.6 A


Features:

• 2.6 A, 30 V.    RDS(ON) = 40 mΩ @ VGS = 10 V
                         RDS(ON) = 50 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)



Application

• DC-DC Converter
• Motor Drives



Specifications

Symbol
Parameter
Ratings
Units
VDSS Drain-Source Voltage
30
V
VGS Gate-Source Voltage
±16
V
ID Drain Current Continuous                (Note 1a)
                           Pulsed
2.6
A
10
PD Power Dissipation for Single Operation(Note 1a)
                                                             (Note 1b)
0.5
W
0.46
TJ, TSTG Operating and Storage Temperature
-55 to 175
Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a minimum pad.



Description

The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on) and low gate charge. The FDN372S includes an integrated Schottky diode using Fairchild Semiconductor's monolithic SyncFET process, making it ideal as the low side switch in a synchronous converter.




Parameters:

Technical/Catalog InformationFDN372S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.6A
Rds On (Max) @ Id, Vgs40 mOhm @ 2.6A, 10V
Input Capacitance (Ciss) @ Vds 630pF @ 15V
Power - Max460mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs8.1nC @ 5V
Package / CaseSSOT-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDN372S
FDN372S



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