FDN5618P

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 60 V
Resistance Drain-Source RDS (on) : 0.17 Ohms
Continuous Drain Current : 1.2 A
Package / Case : SuperSOT


Features:

*  1.25 A, 60 V. R _DS(ON) = 0.170 @ V_GS = 10 V
                               R _DS(ON) = 0.230 @ V_GS = 4.5 V
* Fast switching speed
*  High performance trench technology for extremely low R _DS(ON)


Application

* DC-DC converters
* Load switch
* Power management


Specifications

 

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-60	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current  - Continuous               (Note 1a)                         - Pulsed	-1.25	A
		-10
PD	Maximum Power Dissipation            (Note 1a)                                                         (Note 1b)	0.5	W
		0.46
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

This FDN5618P 60V P-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.


Parameters:

Technical/Catalog Information	FDN5618P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	1.25A
Rds On (Max) @ Id, Vgs	170 mOhm @ 1.25A, 10V
Input Capacitance (Ciss) @ Vds	430pF @ 30V
Power - Max	460mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	13.8nC @ 10V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN5618P FDN5618P FDN5618PCT ND FDN5618PCTND FDN5618PCT