FDN5630

MOSFET SSOT-3 N-CH 60V

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SeekIC No. : 00145969 Detail

FDN5630: MOSFET SSOT-3 N-CH 60V

floor Price/Ceiling Price

US $ .15~.26 / Piece | Get Latest Price
Part Number:
FDN5630
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1.7 A
Resistance Drain-Source RDS (on) : 0.073 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SuperSOT Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 1.7 A
Resistance Drain-Source RDS (on) : 0.073 Ohms
Package / Case : SuperSOT


Features:

*1.7 A, 60 V. R DS(ON)  = 0.100 @ VGS  = 10 V
                      R DS(ON) = 0.120 @ VGS =  6 V.

*Optimized for use in  high frequency DC/DC converters.
* Low gate charge.
* Very fast switching.
* SuperSOTTM  - 3 provides low R DS(ON) in SOT23 footprint.



Application

* DC/DC converter
* Motor drives



Specifications

 

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

60

V

VGSS

Gate-Source Voltage

±20

V

ID

Drain Current  - Continuous                  (Note 1a)
  - Pulsed

1.7

A

10

PD

Power Dissipation for Single Operation (Note 1a)
  (Note 1b)

0.5

W

0.46

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150




Description

This FDN5630 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

This FDN5630 MOSFET features  very low R DS(ON) in a small  SOT23 footprint.  Fairchild's PowerTrench technology provides faster switching than other MOSFETs with comparable R DS(ON)  specifications.  The result is  higher overall efficiency with less board space.


Parameters:

Technical/Catalog InformationFDN5630
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C1.7A
Rds On (Max) @ Id, Vgs100 mOhm @ 1.7A, 10V
Input Capacitance (Ciss) @ Vds 400pF @ 15V
Power - Max460mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs10nC @ 10V
Package / CaseSSOT-3
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDN5630
FDN5630
FDN5630TR ND
FDN5630TRND
FDN5630TR



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