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FDP20AN06A0

MOSFET 60V N-Ch PowerTrench MOSFET

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SeekIC No. : 00161559 Detail

FDP20AN06A0: MOSFET 60V N-Ch PowerTrench MOSFET

FDP20AN06A0 Data Sheet

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Part Number:
FDP20AN06A0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 0.02 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 0.02 Ohms


Features:

• rDS(ON) = 17mΩ (Typ.), VGS = 10V, ID = 45A
• Qg(tot) = 15nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101


Application

• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems


Specifications

Symbol
Parameter
Ratings
Units
VDSS Drain to Source Voltage
60
V
VGS Gate to Source Voltage
±20
V
ID Drain Current
Continuous (TC=25, VGS = 10V)
45
A
Continuous (TC = 25, VGS = 10V, RJA = 43/W)
32
A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)
9
A
Pulsed
Figure 4
A
EAS Single Pulse Avalanche Energy (Note 1)
50
mJ
PD Power dissipation
90
W
Derate above 25
0.60
W/
TJ, TSTG Operating and Storage Temperature
-55 to 175



Parameters:

Technical/Catalog InformationFDP20AN06A0
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C45A
Rds On (Max) @ Id, Vgs20 mOhm @ 45A, 10V
Input Capacitance (Ciss) @ Vds 950pF @ 25V
Power - Max90W
PackagingTube
Gate Charge (Qg) @ Vgs19nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP20AN06A0
FDP20AN06A0



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