FDP20N40

MOSFET 20a 400V N-Ch SMPS Power MOSFET

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SeekIC No. : 00160610 Detail

FDP20N40: MOSFET 20a 400V N-Ch SMPS Power MOSFET

floor Price/Ceiling Price

Part Number:
FDP20N40
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.216 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 400 V
Resistance Drain-Source RDS (on) : 0.216 Ohms


Features:

• Low Gate Charge Qg results in Simple Drive Requirement
• Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness
• Reduced rDS(ON)
• Reduced Miller Capacitance and Low Input Capacitance
• Improved Switching Speed with Low EMI
• 175°C Rated Junction Temperature



Application

• PFC Boost
• Two-Switch Forward Converter
• Single Switch Forward Converter
• Flyback Converter
• Buck Converter
• High Speed Switching



Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
400
±30

20
14
80
273
1.82
-55 to 175
300 (1.6mm from case)
10ibf*in (1.1N*m)
V
V

A
A
A
W
W/


ID
Drain Current
Continuous (TC = 25, VGS = 10V)
Continuous (TC = 100, VGS = 10V)
Pulsed (Note 1)
PD
Power dissipation
Derate above 25
TJ, TSTG
Operating and Storage Temperature
Soldering Temperature for 10 seconds
Mounting Torque, 8-32 or M3 Screw



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