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FDP6670AS

Features: • 31 A, 30 V. R DS(ON)= 8.5 mΩ @ VGS = 10 VR DS(ON)= 10.5 mΩ@ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (28nC typical) • High performance trench technology for extremely low R DS(ON)= and fast switching • High power and...

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SeekIC No. : 004341087 Detail

FDP6670AS: Features: • 31 A, 30 V. R DS(ON)= 8.5 mΩ @ VGS = 10 VR DS(ON)= 10.5 mΩ@ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (28nC typical) • High...

FDP6670AS Data Sheet

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Part Number:
FDP6670AS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•  31 A, 30 V.  R DS(ON)=  8.5 mΩ @ VGS = 10 V 
                      R DS(ON)=  10.5 mΩ@ VGS = 4.5 V
•  Includes SyncFET Schottky body diode 
•  Low gate charge (28nC typical)
•  High performance trench technology for extremely low R DS(ON)=  and fast switching
•  High power and current handling capability 


Specifications

Symbol
Parameter
FDP6670AS
FDB6670AS
Units
VDSS
Drain-Source Voltage
30 
V
VGSS
Gate-Source Voltage
± 20
V
ID
 Drain Current - Continuous    
                       - Pulsed       
62
A
150
PD
Total Power Dissipation @ TC=25         
                    Derate above 25
62.5
W
0.5
W/
TJ, Tstg
Operating and Storage Temperature Range
55 to +150
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275



Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.  This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)  and low gate charge.  The FDP6670AS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.   The performance of the FDP6670AS/FDB6670AS as the low-side switch in a synchronous rectifier is  indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode.




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