MOSFET 30V N-Ch PowerTrench Logic Level
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 84 A | ||
Resistance Drain-Source RDS (on) : | 0.006 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Symbol |
Parameter |
FDP5645 |
FDB5645 |
Units |
VDSS |
Drain-Source Voltage |
30 |
V | |
VGSS |
Gate-Source Voltage |
± 16 |
V | |
ID |
Drain Current - Continuous (Note 1)
- Pulsed (Note 1) |
84 |
A | |
240 | ||||
PD |
Total Power Dissipation @ TC=25
Derate above 25 |
93 |
W | |
0.48 |
W/ | |||
TJ, Tstg |
Operating and Storage Temperature Range |
-65 to +175 |
This FDP6676 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) .