FDP6676S

Transistor Polarity : N-Channel
Configuration : Single
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 76 A
Resistance Drain-Source RDS (on) : 6.5 m Ohms


Features:

•  38 A, 30 V.  R _DS(ON) = 6.5 mΩ @ V_GS = 10 V 
                       R _DS(ON) =8.0 mΩ @ V_GS = 4.5 V
•  Includes SyncFET Schottky body diode 
•  Low gate charge (40nC typical)
•  High performance trench technology for extremely low RDS(ON)  and fast switching
•  High power and current handling capability 


Specifications

Symbol	Parameter	FDP6676S	FDB6676S	Units
VDSS	Drain-Source Voltage	30		V
VGSS	Gate-Source Voltage	±16		V
ID	Drain Current - Continuous                            - Pulsed	76		A
		150
PD	Total Power Dissipation @ TC=25                              Derate above 25	70		W
		0.56		W/
TJ, Tstg	Operating and Storage Temperature Range	55 to +150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275

Description

This FDP6676S MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.  This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)  and low gate charge.  The FDP/B6676S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.   The performance of the FDP/B6676S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP/B6676 in parallel with a Schottky diode.