FDP6690S

MOSFET 30V N-Ch PowerTrench

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SeekIC No. : 00166205 Detail

FDP6690S: MOSFET 30V N-Ch PowerTrench

floor Price/Ceiling Price

Part Number:
FDP6690S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 42 A
Resistance Drain-Source RDS (on) : 0.0155 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 42 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.0155 Ohms


Features:

·  21 A, 30 V.  R DS(ON)=  15.5 mW @ VGS = 10 V 
                        R DS(ON)=  23.0 mW @ VGS = 4.5 V
·  Includes SyncFET Schottky body diode  
·  Low gate charge (11nC typical)
·  High performance trench technology for extremely low R DS(ON)  and fast switching
·  High power and current handling capability 



Specifications

Symbol
Parameter
FDP6690S
FDB6690S
Units
VDSS
Drain-Source Voltage
30 
V
VGSS
Gate-Source Voltage
± 20
V
ID
 Drain Current - Continuous    
                       - Pulsed       
42
A
140
PD
Total Power Dissipation @ TC=25         
                   Derate above 25
48
W
0.5
W/
TJ, Tstg
Operating and Storage Temperature Range
55 to +150
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275



Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.  This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)  and low gate charge.  The FDP6690S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.   The performance of the FDP6690S/FDB6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6035AL/FDB6035AL in parallel with a Schottky diode. 




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