MOSFET 30V N-Ch PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 42 A | ||
Resistance Drain-Source RDS (on) : | 0.0155 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Symbol |
Parameter |
FDP6690S |
FDB6690S |
Units |
VDSS |
Drain-Source Voltage |
30 |
V | |
VGSS |
Gate-Source Voltage |
± 20 |
V | |
ID |
Drain Current - Continuous
- Pulsed |
42 |
A | |
140 | ||||
PD |
Total Power Dissipation @ TC=25
Derate above 25 |
48 |
W | |
0.5 |
W/ | |||
TJ, Tstg |
Operating and Storage Temperature Range |
55 to +150 |
||
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP6690S/FDB6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6035AL/FDB6035AL in parallel with a Schottky diode.