FDP7030BLS

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 56 A
Resistance Drain-Source RDS (on) : 0.0105 Ohms
Maximum Operating Temperature : + 100 C


Features:

·  56 A, 30 V. R _DS(ON) = 10.5 mW @ V_GS = 10 V
                     R _DS(ON) = 16.5 mW @ V_GS = 4.5 V
·  Includes SyncFET Schottky body diode
·  Low gate charge (15nC typical)
·  High performance trench technology for extremely low R _DS(ON) and fast switching
·  High power and current handling capability


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 1)                       Pulsed (Note 1)	56	A
		160
PD	Total Power Dissipation @ TC = 25°C                     Derate above 25°C	65	W
		0.43	W/°C
TJ, TSTG	Operating and Storage Junction Temperature Range	65 to +100	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275	°C

Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R _DS(ON) and low gate charge. The FDP7030BLS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP7030BLS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP7030BL in parallel with a Schottky diode.