FDP8874

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 114 A
Resistance Drain-Source RDS (on) : 0.0036 Ohms


Features:

* r _DS(ON)  = 5.3mW  , V_GS= 10V, I_D  = 40A
* r _DS(ON) = 6.6mW ,V_GS = 4.5V, I_D = 40A
* High performance trench technology for extremely low r _DS(ON)
* Low gate charge
* High power and current handling capability


Application

* DC/DC converters


Specifications

 

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	30	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current	114	A
	Continuous (TC = 25, VGS = 10V)
	Continuous (TC = 100, VGS = 10V)	102	A
	Continuous (Tamb = 25 , VGS = 10V, RJA = 62/W)	16	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy (Note 2)	105	mJ
PD	Power dissipation	110	W
	Derate above 25	0.73	W/
TJ , TSTG	Operating and Storage Temperature	-55to 175

Description

This FDP8874 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low r _DS(ON)  and fast switching speed.



Parameters:

Technical/Catalog Information	FDP8874
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	114A
Rds On (Max) @ Id, Vgs	5.3 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	3130pF @ 15V
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	72nC @ 10V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP8874 FDP8874