FDPF12N35 Selling Leads, Price trend , Fairchild Semiconductor, FDPF12N35 DataSheet download, circuit diagram from SeekIC.com

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FDPF12N35: MOSFET 350V N-Ch MOSFET

FDPF12N35 Data Sheet

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Part Number:: FDPF12N35
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	350 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	7.5 A
Resistance Drain-Source RDS (on) :	0.38 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220F	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 7.5 A
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Resistance Drain-Source RDS (on) : 0.38 Ohms
Drain-Source Breakdown Voltage : 350 V

Parameters:

Technical/Catalog Information	FDPF12N35
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	350V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	380 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	1110pF @ 25V
Power - Max	31.3W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDPF12N35 FDPF12N35

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FDPF12N35

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