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FDPF44N25

Features: * 18A, 250V, R DS(on) = 0.069W @VGS = 10 V* Low gate charge ( typical 47 nC)* Low Crss ( typical 60 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capabilitySpecifications Symbol Parameter FDPF44N25 Unit VDSS Drain-Source Voltage 250 V ID ...

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SeekIC No. : 004341088 Detail

FDPF44N25: Features: * 18A, 250V, R DS(on) = 0.069W @VGS = 10 V* Low gate charge ( typical 47 nC)* Low Crss ( typical 60 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capabilitySpecifications ...

FDPF44N25 Data Sheet

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Part Number:
FDPF44N25
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* 18A, 250V, R DS(on)  = 0.069 W @VGS  = 10 V
* Low gate charge ( typical 47 nC)
* Low Crss  ( typical  60 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


Specifications

Symbol

Parameter

FDPF44N25

Unit

VDSS

Drain-Source Voltage

250

V

ID

Drain Current - Continuous (TC = 25)
                    - Continuous (TC = 100)

18
10.8

A
A

IDM

Drain Current Pulsed                 (Note 1)

72

A

VGSS

Gate-Source voltage

±30

V

EAS

Single Pulsed Avalanche Energy  (Note 2)

2055

mJ

IAR

I Avalanche Current                 (Note 1)

18

A

EAR

Repetitive Avalanche Energy     (Note 1)

5.6

mJ

dv/dt

Peak Diode Recovery dv/dt        (Note 3)

4.5

V/ns

PD

Power Dissipation (TC = 25)
              - Derate above 25

56
0.45

W
W/

TJ,TSTG

Operating and Storage Temperature Range

-55to+150

°C

TL

Maximum Lead Temperature for Soldering Purpose,1/8" from Case for 5 Seconds

300

°C




Description

These FDPF44N25 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and  commutation mode. These devices FDPF44N25 are well suited for high efficient switched mode power supplies and active power factor correction.


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