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FDR6580

MOSFET SSOT-8 N-CH 2.5V

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SeekIC No. : 00161772 Detail

FDR6580: MOSFET SSOT-8 N-CH 2.5V

FDR6580 Data Sheet

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Part Number:
FDR6580
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 11.2 A
Resistance Drain-Source RDS (on) : 5.2 m Ohms Configuration : Single Quint Drain Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 11.2 A
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 5.2 m Ohms
Package / Case : SSOT-8
Configuration : Single Quint Drain Dual Source


Parameters:

Technical/Catalog InformationFDR6580
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C11.2A
Rds On (Max) @ Id, Vgs9 mOhm @ 11.2A, 4.5V
Input Capacitance (Ciss) @ Vds 3829pF @ 10V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs48nC @ 4.5V
Package / CaseSSOT-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDR6580
FDR6580



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