FDR6678A

Resistance Drain-Source RDS (on) :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 7.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Quint Drain Dual Source
Package / Case : SuperSOT-8


Features:

• 7.5 A, 30 V. RDS(ON) = 24 m @ VGS = 4.5V
                      RDS(ON) = 20 m @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• Fast switching, low gate charge
• High power and current in a smaller footprint than



Application

• DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a) Pulsed	7.5	A
		40
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	1.8	W
		1.0
		0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This FDR6678A N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "high side" synchronous rectifier operation, providing an extremely low RDS(ON) and fast switching in a small package.