FDR6678A

MOSFET SSOT-8 N-CH 30V

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FDR6678A Picture
SeekIC No. : 00164973 Detail

FDR6678A: MOSFET SSOT-8 N-CH 30V

floor Price/Ceiling Price

Part Number:
FDR6678A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 7.5 A
Configuration : Single Quint Drain Dual Source Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SuperSOT-8
Packaging : Reel    

Description

Resistance Drain-Source RDS (on) :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 7.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Quint Drain Dual Source
Package / Case : SuperSOT-8


Features:

• 7.5 A, 30 V. RDS(ON) = 24 m @ VGS = 4.5V
                      RDS(ON) = 20 m @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• Fast switching, low gate charge
• High power and current in a smaller footprint than



Application

• DC/DC converter


Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current Continuous (Note 1a)
Pulsed
7.5
A
40
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.8
W
1.0
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C



Description

This FDR6678A N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "high side" synchronous rectifier operation, providing an extremely low RDS(ON) and fast switching in a small package.




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