MOSFET SO-8
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 80 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4 A | ||
Resistance Drain-Source RDS (on) : | 0.07 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
• 4.0 A, 80 V RDS(ON) = 70 m @ VGS = 10 V
RDS(ON) = 80 m @ VGS = 6 V
• Low gate charge (13nC Typical)
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
80 |
V |
VGSS |
Gate-Source Voltage |
+20 |
V |
ID |
Draint Current - Continuous (Note 1) |
4.0 |
A |
- Pulsed |
30 | ||
PD |
Maximum Power Dissipation (Note 1a) |
2.5 |
W |
(Note 1b) |
1.2 | ||
(Note 1c) |
1.0 | ||
TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +175 |
°C |
Technical/Catalog Information | FDS3512 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25° C | 4A |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 4A, 10V |
Input Capacitance (Ciss) @ Vds | 634pF @ 40V |
Power - Max | 1W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 18nC @ 10V |
Package / Case | 8-SOIC |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS3512 FDS3512 |