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FDS3570

MOSFET SO-8 N-CH 80V

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SeekIC No. : 00162553 Detail

FDS3570: MOSFET SO-8 N-CH 80V

FDS3570 Data Sheet

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Part Number:
FDS3570
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.015 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 80 V
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.015 Ohms


Parameters:

Technical/Catalog InformationFDS3570
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs20 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 2750pF @ 25V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs76nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS3570
FDS3570



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