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FDS3572

MOSFET 80V N-Channel PowerTrench

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SeekIC No. : 00152203 Detail

FDS3572: MOSFET 80V N-Channel PowerTrench

FDS3572 Data Sheet

floor Price/Ceiling Price

US $ .52~.93 / Piece | Get Latest Price
Part Number:
FDS3572
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 25~100
  • 100~250
  • Unit Price
  • $.93
  • $.77
  • $.65
  • $.52
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8.9 A
Resistance Drain-Source RDS (on) : 0.016 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 80 V
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.016 Ohms
Continuous Drain Current : 8.9 A


Features:

•rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A
•Qg(tot) = 31nC (Typ.), VGS = 10V
• Low Miller Charge
•Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)


Pinout

Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 80 V
VGS Gate to Source Voltage ±20 V
ID Drain Current
Continuous (TA = 25oC, VGS = 10V, RJA = 55oC/W) 		8.9 A
Continuous (TA = 25 C, VGS = 5V, RJA = 55 C/W) 5.6 A
Pulsed Figure 4 A
EAS Single Pulse Avalanche Energy ( Note 1) 515 mJ
PD Power dissipation 2.5 W
Derate above 25oC 20 mW/oC
TJ, TSTG Operating and Storage Temperature -55 to 150 oC



Description

FDS3572 features:

• Primary switch for Isolated DC/DC converters
• Distributed Power and Intermediate Bus Architectures
• High Voltage Synchronous Rectifier for DC Bus Converters




Parameters:

Technical/Catalog InformationFDS3572
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25° C8.9A
Rds On (Max) @ Id, Vgs16 mOhm @ 8.9A, 10V
Input Capacitance (Ciss) @ Vds 1990pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs41nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS3572
FDS3572



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