FDS3572

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 80 V
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.016 Ohms
Continuous Drain Current : 8.9 A


Features:

•r_DS(ON) = 14mΩ (Typ.), V_GS = 10V, I_D = 8.9A
•Q_g(tot) = 31nC (Typ.), V_GS = 10V
• Low Miller Charge
•Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	80	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TA = 25oC, VGS = 10V, RJA = 55oC/W)	8.9	A
	Continuous (TA = 25 C, VGS = 5V, RJA = 55 C/W)	5.6	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy ( Note 1)	515	mJ
PD	Power dissipation	2.5	W
	Derate above 25oC	20	mW/oC
TJ, TSTG	Operating and Storage Temperature	-55 to 150	oC

Description

FDS3572 features:

• Primary switch for Isolated DC/DC converters
• Distributed Power and Intermediate Bus Architectures
• High Voltage Synchronous Rectifier for DC Bus Converters

Parameters:

Technical/Catalog Information	FDS3572
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	8.9A
Rds On (Max) @ Id, Vgs	16 mOhm @ 8.9A, 10V
Input Capacitance (Ciss) @ Vds	1990pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	41nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS3572 FDS3572