FDS3580

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 80 V
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 7.6 A
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

• 7.6 A, 80 V. RDS(ON) = 0.027 W @ VGS = 10 V
                      RDS(ON) = 0.031 W @ VGS = 6 V.
• Low gate charge (34nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	80	V
VGSS	Gate-Source Voltage	+20	V
ID	Draint Current - Continuous (Note 1)	7.6	A
	- Pulsed	50
PD	Maximum Power Dissipation (Note 1a)	2.5	W
	(Note 1b)	1.2
	(Note 1c)	1
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS3580 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs FDS3580 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.


Parameters:

Technical/Catalog Information	FDS3580
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	7.6A
Rds On (Max) @ Id, Vgs	29 mOhm @ 7.6A, 10V
Input Capacitance (Ciss) @ Vds	1800pF @ 25V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	46nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS3580 FDS3580