FDS3601

MOSFET SO-8

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FDS3601 Picture
SeekIC No. : 00151535 Detail

FDS3601: MOSFET SO-8

floor Price/Ceiling Price

US $ .85~1.2 / Piece | Get Latest Price
Part Number:
FDS3601
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.2
  • $1.08
  • $.95
  • $.85
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1.3 A
Resistance Drain-Source RDS (on) : 0.48 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.48 Ohms
Continuous Drain Current : 1.3 A


Features:

• 1.3 A, 100 V. RDS(ON) = 480 m @ VGS = 10 V
                        RDS(ON) = 530 m @ VGS = 6 V
• Fast switching speed
• Low gate charge (3.7nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Ratings
Units
VDSS Drain-Source Voltage
100
V
VGSS Gate-Source Voltage
± 20
ID

Drain Current Continuous (Note 1a)
            Pulsed
1.3
A
6
PD

Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation (Note 1a)
                                     (Note 1b)
                                     (Note 1c)
1.6
1.0
0.9
TJ, TSTG Operating and Storage Junction Temperature Range
55 to +150
°C



Description

These FDS3601 N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETs FDS3601 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDS3601
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C1.3A
Rds On (Max) @ Id, Vgs480 mOhm @ 1.3A, 10V
Input Capacitance (Ciss) @ Vds 153pF @ 50V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs5nC @ 10V
Package / CaseSO-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS3601
FDS3601



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