FDS3612

MOSFET SO-8

product image

FDS3612 Picture
SeekIC No. : 00162339 Detail

FDS3612: MOSFET SO-8

floor Price/Ceiling Price

Part Number:
FDS3612
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/18

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.4 A
Resistance Drain-Source RDS (on) : 0.12 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 3.4 A
Resistance Drain-Source RDS (on) : 0.12 Ohms


Features:

• 3.4 A, 100 V. RDS(ON) = 120 m @ VGS = 10 V
                        RDS(ON) = 130 m @ VGS = 6 V
• Fast switching speed
• Low gate charge (14 nC typ)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability



Application

• DC/DC converter
• Motor Driver



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Ratings
Units
VDSS Drain-Source Voltage
100
V
VGSS Gate-Source Voltage
± 20
ID

Drain Current Continuous (Note 1a)
            Pulsed
3.4
A
20
PD

Power Dissipation for Single Operation (Note 1a)
                                (Note 1b)
                                (Note 1c)
2.5
W
1.2
1.0
TJ, TSTG Operating and Storage Junction Temperature Range
55 to +150
°C



Description

This FDS3612 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETs FDS3612 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDS3612
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C3.4A
Rds On (Max) @ Id, Vgs120 mOhm @ 3.4A, 10V
Input Capacitance (Ciss) @ Vds 632pF @ 50V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS3612
FDS3612



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optical Inspection Equipment
Integrated Circuits (ICs)
RF and RFID
Programmers, Development Systems
View more