MOSFET SO-8 N-CH 100V
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 6.3 A | ||
| Resistance Drain-Source RDS (on) : | 0.022 Ohms | Configuration : | Single Quad Drain Triple Source | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 Narrow | Packaging : | Reel |

| Symbol | Parameter |
Ratings |
Units |
| VDSS | Drain-Source Voltage |
100 |
V |
| VGSS | Gate-Source Voltage |
± 20 | |
| ID |
Drain Current Continuous (Note 1a) Pulsed |
6.3 |
A |
|
50 | |||
| PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
2.5 |
W |
|
1.2 | |||
|
1.0 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
This FDS3670 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETs FDS3670 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency
| Technical/Catalog Information | FDS3670 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 6.3A |
| Rds On (Max) @ Id, Vgs | 32 mOhm @ 6.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 2490pF @ 50V |
| Power - Max | 1W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 80nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS3670 FDS3670 |