FDS3670

MOSFET SO-8 N-CH 100V

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SeekIC No. : 00160119 Detail

FDS3670: MOSFET SO-8 N-CH 100V

floor Price/Ceiling Price

Part Number:
FDS3670
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6.3 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 6.3 A
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

• 6.3 A, 100 V. RDS(ON) = 0.030 @ VGS = 10 V
                        RDS(ON) = 0.033 @ VGS = 6 V.
• Low gate charge (57 nC typical).
• Fast switching speed
• High performance trench technology for extremely low RDS(ON) .
• High power and current handling capability



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Ratings
Units
VDSS Drain-Source Voltage
100
V
VGSS Gate-Source Voltage
± 20
ID

Drain Current Continuous (Note 1a)
                  Pulsed
6.3
A
50
PD

Power Dissipation for Single Operation (Note 1a)
                                     (Note 1b)
                                    (Note 1c)
2.5
W
1.2
1.0
TJ, TSTG Operating and Storage Junction Temperature Range
55 to +150
°C



Description

This FDS3670 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETs FDS3670 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency




Parameters:

Technical/Catalog InformationFDS3670
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C6.3A
Rds On (Max) @ Id, Vgs32 mOhm @ 6.3A, 10V
Input Capacitance (Ciss) @ Vds 2490pF @ 50V
Power - Max1W
PackagingTube
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseSO-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS3670
FDS3670



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