MOSFET SO-8 N-CH 100V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4.2 A | ||
Resistance Drain-Source RDS (on) : | 0.064 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol | Parameter |
Ratings |
Units |
VDSS | Drain-Source Voltage |
100 |
V |
VGSS | Gate-Source Voltage |
± 20 | |
ID |
Drain Current Continuous (Note 1a) Pulsed |
5 |
A |
40 | |||
PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
2.5 |
W |
1.2 | |||
1.0 | |||
TJ, TSTG | Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
This FDS3690 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs FDS3690 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies),and DC/DC power supply designs with higher overall efficiency.