FDS3692

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.05 Ohms


Features:

•r_DS(ON) = 50mΩ (Typ.), V_GS = 10V, I_D = 4.5A
•Q_g(tot) = 11nC (Typ.), V_GS = 10V
• Low Miller Charge
•Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)




Application

• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems




Pinout






Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	100	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TA = 25oC, VGS = 10V, RJA = 55oC/W)	4.5	A
	Continuous (TA = 25 C, VGS = 5V, RJA = 55 C/W)	2.8	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy ( Note 1)	171	mJ
PD	Power dissipation	2.5	W
	Derate above 25oC	20	mW/oC
TJ, TSTG	Operating and Storage Temperature	-55 to 150	oC

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDS3692	Full Production	RoHS Compliant	$0.87	SO-8	8	TAPE REEL		Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &2 (2-Digit Date Code) &T (Die Trace Code) Line 2: FDS3692

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDS3692 is available. Click here for more information .

Description

The FDS3692 is a type of n-channel powertrench mosfet.

Features of the FDS3692 are:(1)rDS(ON) = 50m(Typ.), VGS = 10V, ID = 4.5A; (2)Qg(tot) = 11nC (Typ.), VGS = 10V;(3)low miller charge; (4)low qrr body diode; (5)optimized efficiency at high frequencies; (6)UIS capability (single pulse a nd repetitive pulse)

The absolute maximum ratings(TA = 25°C) and electrical characteristics of the FDS3692 can be summarized as:(1): drain to source voltage is 100 V;(2):vgs gate to source voltage is ±20 V;(3):drain current:continuous (TA = 25oC, V GS = 10V, RJA = 50/W) is 4.5 A,continuous (TA = 100oC, VGS = 10V, RJA = 50oC/W) is 2.8 A;(4):EAS single pulse avalanche energy is 171 mJ; (5):power dissipation is 2.5 W;(6):derate above 25oC is 20 mW/oC;(7):operating and storage temperature is from-55 to 150 .Electrical characteristics:(1):drain to source breakdown voltage is 100V min when ID is 250A and VGS = 0V;(2):zero gate voltage drain current is 1uA when VDS is 80V and VGS is 0V;(3): gate to source leakage current is±100 nA when VGS is±20V;(4):drain to source on resistance is 0.064 typ and 0.0 96 max when ID is 2A and VGS is 6V;(5):reverse recovery time is 47ns when ISD is 4.5A and dISD/dt is 100A/s .

Parameters:

Technical/Catalog Information	FDS3692
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	60 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	746pF @ 25V
Power - Max	2.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS3692 FDS3692 FDS3692CT ND FDS3692CTND FDS3692CT