FDS3912

MOSFET SO-8

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FDS3912 Picture
SeekIC No. : 00161456 Detail

FDS3912: MOSFET SO-8

floor Price/Ceiling Price

Part Number:
FDS3912
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 0.125 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 0.125 Ohms


Features:

3 A, 100 V. RDS(ON) = 125 m @ VGS = 10 V
                    RDS(ON) = 135 m @ VGS = 6 V
Fast switching speed
Low gate charge (14 nC typ)
High performance trench technology for extremely low RDS(ON)
High power and current handling capability



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Ratings
Units
VDSS Drain-Source Voltage
100
V
VGSS Gate-Source Voltage
± 20
ID

Drain Current Continuous (Note 1a)
             Pulsed
3
A
20
PD

Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation (Note 1a)
                                           (Note 1b)
                                           (Note 1c)
1.6
1.0
0.9
TJ, TSTG Operating and Storage Junction Temperature Range
55 to +150
°C



Description

These FDS3912 N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETs FDS3912 feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDS3912
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs125 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 632pF @ 50V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseSO-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS3912
FDS3912



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