FDS4070N3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8
Configuration : Single Triple Source
Resistance Drain-Source RDS (on) : 0.0075 Ohms
Continuous Drain Current : 15.3 A


Features:

• 15.3 A, 40 V. RDS(ON) = 7.5 m @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching, low gate charge
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size


Application

• Synchronous rectifier
• DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	40	V
VGSS	Gate-Source Voltage	+20	V
ID	Draint Current - Continuous (Note 1)	15.3	A
	- Pulsed	60
PD	Power Dissipation for Single Operation (Note 1a)	3.9	W
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS4070N3 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Parameters:

Technical/Catalog Information	FDS4070N3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	15.3A
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 15.3A, 10V
Input Capacitance (Ciss) @ Vds	2819pF @ 20V
Power - Max	3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	67nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS4070N3 FDS4070N3 FDS4070N3TR ND FDS4070N3TRND FDS4070N3TR