FDS4470

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.009 Ohms
Gate-Source Breakdown Voltage : - 20 V, + 30 V
Continuous Drain Current : 12.5 A


Features:

·  12.5 A, 40 V. RDS(ON) = 9 mW @ VGS = 10 V
·  Low gate charge (45 nC)
·  High performance trench technology for extremely low RDS(ON)
·  High power and current handling capability


Application

·  DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	40	V
VGSS	Gate-Source Voltage	+30/20	V
ID	Draint Current - Continuous (Note 1)	12.5	A
	- Pulsed	50
PD	Maximum Power Dissipation (Note 1a)	2.5	W
	(Note 1b)	1.4
	(Note 1c)	1.2
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDS4470 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Parameters:

Technical/Catalog Information	FDS4470
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	12.5A
Rds On (Max) @ Id, Vgs	9 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds	2659pF @ 20V
Power - Max	1.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	63nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS4470 FDS4470