FDS4480

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.012 Ohms
Continuous Drain Current : 10.8 A
Gate-Source Breakdown Voltage : - 20 V, + 30 V


Features:

10.8 A, 40 V. R_DS(ON) = 12 m @ V_GS = 10 V
Low gate charge (29 nC)
High performance trench technology for extremely low R_DS(ON)
High power and current handling capability


Application

DC/DC converter


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS	Drain-Source Voltage		40	V
VGSS	Gate-Source Voltage		+30/20
ID	Drain Current	Continuous (Note 1a) Pulsed	10.8	A
			45
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)	2.5	W
			1.4
			1.2
TJ, TSTG	Operating and Storage Junction Temperature Range		55 to +175	°C

Description

This N-Channel MOSFET FDS4480 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_DS(ON) and fast switching speed.

Parameters:

Technical/Catalog Information	FDS4480
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	10.8A
Rds On (Max) @ Id, Vgs	12 mOhm @ 10.8A, 10V
Input Capacitance (Ciss) @ Vds	1686pF @ 20V
Power - Max	1.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	41nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS4480 FDS4480