FDS4501H

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.018 Ohms
Drain-Source Breakdown Voltage : + 30 V / - 20 V
Gate-Source Breakdown Voltage : +/- 20 V, +/- 8 V
Continuous Drain Current : 9.3 A, - 5.6 A
Configuration : Dual Common Quad Drain


Features:

`  Q1: N-Channel
9.3A, 30V RDS(on) = 18 mW @ VGS = 10V
                   S(on) = 23 mW @ VGS = 4.5V
`  Q2: P-Channel
5.6A, 20V RDS(on) = 46 mW @ VGS = 4.5V
                      RDS(on) = 63 mW @ VGS = 2.5V


Application

·  DC/DC converter
·  Power management
·  Load switch
·  Battery protection


Pinout




Specifications

Symbol	Parameter	Q1	Q2	Units
VDSS	Drain-Source Voltage	30	-20	V
VGSS	Gate-Source Voltage	±8	±20	V
ID	Drain Current - Continuous (Note 1a)	9.3	5.6	A
	- Pulsed	20	-20
PD	Power Dissipation for Single Operation (Note 1a)	2.5		W
	(Note 1b)	1.2
	(Note 1c)	1
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150		°C

Description

This complementary MOSFET half-bridge device FDS4501H is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Parameters:

Technical/Catalog Information	FDS4501H
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V, 20V
Current - Continuous Drain (Id) @ 25° C	9.3A, 5.6A
Rds On (Max) @ Id, Vgs	18 mOhm @ 9.3A, 10V
Input Capacitance (Ciss) @ Vds	1958pF @ 10V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	27nC @ 4.5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS4501H FDS4501H