FDS4685

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 8.2 A
Resistance Drain-Source RDS (on) : 0.022 Ohms
Drain-Source Breakdown Voltage : - 40 V


Features:

8.2 A, 40 V RDS(ON)= 0.027@ VGS= 10 V
                           RDS(ON)= 0.035@ VGS= 4.5 V
Fast switching speed
High performance trench technology for extremely lowRDS(ON)
High power and current handling capability


Application

Power management
Load switch
Battery protection


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-40	V
VGSS	Gate-Source Voltage	+20	V
ID	Draint Current - Continuous (Note 1)	-8.2	A
	- Pulsed	-50
PD	Maximum Power Dissipation (Note 1a)	2.5	W
	(Note 1b)	1.4
	(Note 1c)	1.2
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS4685 P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V 20V).

Parameters:

Technical/Catalog Information	FDS4685
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	8.2A
Rds On (Max) @ Id, Vgs	27 mOhm @ 8.2A, 10V
Input Capacitance (Ciss) @ Vds	1872pF @ 20V
Power - Max	1.2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	27nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS4685 FDS4685 FDS4685CT ND FDS4685CTND FDS4685CT