FDS6162N3

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Continuous Drain Current : 21 A
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Triple Source
Resistance Drain-Source RDS (on) : 0.045 Ohms


Features:

• 21 A, 20 V R_DS(ON) = 4.5 mΩ @ V_GS = 4.5 V
                    R_DS(ON) = 6.0 mΩ @ V_GS = 2.5 V
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size


Application

• Synchronous rectifier
• DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a)                        Pulsed	21	A
		60
PD	Power Dissipation for Single Operation (Note 1a)	3.0	W
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS6162N3 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/D converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low R_DS(ON) in a small package.


Parameters:

Technical/Catalog Information	FDS6162N3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	4.5 mOhm @ 21A, 4.5V
Input Capacitance (Ciss) @ Vds	5521pF @ 10V
Power - Max	3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	73nC @ 4.5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6162N3 FDS6162N3 FDS6162N3TR ND FDS6162N3TRND FDS6162N3TR