FDS6670A

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.008 Ohms


Features:

13 A, 30 V. RDS(ON)= 0.008 W  @ VGS = 10 V                
                  RDS(ON)= 0.010W  @ VGS = 4.5 V.
Fast switching speed.
Low gate charge (35 nC tyical).
High performance trench technology for
extremely low RDS(ON)
High power and current handling capability.


Pinout




Specifications

</ta

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	11.5	A
		50
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1.0
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This  FDS6670A N-Channel   Logic   Level  MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices FDS6670A are well suited for low voltage and battery powered applications   where low in-line power loss and fast switching  are required.
 

Parameters:

Technical/Catalog Information	FDS6670A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	8 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	2220pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	30nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6670A FDS6670A FDS6670ATR ND FDS6670ATRND FDS6670ATR