FDS6675A General Description
This P-Channel MOSFET is a rugged gate version of airchild Semiconductor's advanced PowerTrench rocess. It has been optimized for power management pplications requiring a wide range of gate drive voltage atings (4.5V 25V).
FDS6675A Features
• 11 A, 30 V RDS(ON) = 13 m @ VGS = 10 V
RDS(ON) = 19 m @ VGS = 4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely ow RDS(ON)
• High power and current handling capability
FDS6675A Typical Application
• Power management
• Load switch
• Battery protection
FDS6675A Connection Diagram
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