FDS6688S

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 16 A
Maximum Operating Temperature : + 125 C
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.006 Ohms


Features:

• 16 A, 30 V. RDS(ON) = 6.0 m @ VGS = 10 V
                     RDS(ON) = 7.5 m @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• High performance trench technology for extremely low RDS(ON) and fast switching
• High power and current handling capability


Application

• DC/DC converter
• Motor drives


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Draint Current - Continuous (Note 1)	16	A
	- Pulsed	50
PD	Power Dissipation for Single Operation (Note 1a)	2.5	W
	(Note 1b)	1.2
	(Note 1c)	1
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

The FDS6688S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6688S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.

Parameters:

Technical/Catalog Information	FDS6688S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	6 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	3290pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	78nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6688S FDS6688S