FDS6812A

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 6.7 A
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

6.7 A, 20 V. R_DS(ON) = 22 m @ V_GS = 4.5 V
                      R_DS(ON) = 35 m @ V_GS = 2.5 V
Low gate charge (12 nC typical)
High performance trench technology for extremely low R_DS(ON)
High power and current handling capability


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a)	6.7	A
	Pulsed	35
PD	Power Dissipation for Dual Operation	2	W
	Power Dissipation for Single Operation (Note 1a)	1.6
	(Note 1b)	1
	(Note 1c)	0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

These FDS6812A N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices FDS6812A are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parameters:

Technical/Catalog Information	FDS6812A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	6.7A
Rds On (Max) @ Id, Vgs	22 mOhm @ 6.7A, 4.5V
Input Capacitance (Ciss) @ Vds	1082pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	19nC @ 4.5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6812A FDS6812A