FDS6890A

MOSFET SO-8 DUAL N-CH 20V

product image

FDS6890A Picture
SeekIC No. : 00146821 Detail

FDS6890A: MOSFET SO-8 DUAL N-CH 20V

floor Price/Ceiling Price

US $ .64~1 / Piece | Get Latest Price
Part Number:
FDS6890A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1
  • $.9
  • $.73
  • $.64
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 7.5 A
Resistance Drain-Source RDS (on) : 0.013 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 7.5 A
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.013 Ohms


Features:

• 7.5 A, 20 V. RDS(ON) = 0.018 @ VGS = 4.5 V
                      RDS(ON) = 0.022 @ VGS = 2.5 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability.



Application

• DC/DC converter
• Motor drives



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Ratings
Units
VDSS Drain-Source Voltage
20
V
VGSS Gate-Source Voltage
±8
ID
Drain Current
Continuous (Note 1a)
Pulsed
7.5
A
20
PD

Power Dissipation for Dual Operation

2
W
Power Dissipation for Single Operation

(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, TSTG Operating and Storage Junction Temperature Range
55 to +150
°C



Description

These FDS6890A N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.




Parameters:

Technical/Catalog InformationFDS6890A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C7.5A
Rds On (Max) @ Id, Vgs18 mOhm @ 7.5A, 4.5V
Input Capacitance (Ciss) @ Vds 2130pF @ 10V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs32nC @ 4.5V
Package / CaseSO-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6890A
FDS6890A
FDS6890ATR ND
FDS6890ATRND
FDS6890ATR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Undefined Category
Discrete Semiconductor Products
Computers, Office - Components, Accessories
Boxes, Enclosures, Racks
Crystals and Oscillators
View more