FDS6900AS

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8
Configuration : Dual
Resistance Drain-Source RDS (on) : 0.022 Ohms
Continuous Drain Current : 6.9 A, 8.2 A


Features:

• Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode
   8.2A, 30V R_DS(on) = 22m @ V_GS = 10V
                   R_DS(on) = 28m @ V_GS = 4.5V
• Q1: Optimized for low switching losses Low Gate Charge (11nC typical)
   6.9A, 30V R_DS(on) = 27m @ V_GS = 10V
                   R_DS(on) = 34m @ V_GS = 4.5V
• 100% R_G (Gate Resistance) Tested


Pinout




Specifications

Symbol	Parameter		Q2	Q1	Units
VDSS	Drain-Source Voltage		30	30	V
VGSS	Gate-Source Voltage		±20	±20
ID	Drain Current	Continuous (Note 1a) Pulsed	8.2	6.9	A
			30	20
PD	Power Dissipation for Dual Operation		2		W
	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)	1.6
			1
			0.9
TJ, TSTG	Operating and Storage Junction Temperature Range		55 to +150		°C

Description

The FDS6900AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.

The FDS6900AS high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.

Parameters:

Technical/Catalog Information	FDS6900AS
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	6.9A, 8.2A
Rds On (Max) @ Id, Vgs	27 mOhm @ 6.9A, 10V
Input Capacitance (Ciss) @ Vds	600pF @ 15V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6900AS FDS6900AS