FDS6912

MOSFET SO-8 DUAL N-CH 30V

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SeekIC No. : 00163604 Detail

FDS6912: MOSFET SO-8 DUAL N-CH 30V

floor Price/Ceiling Price

Part Number:
FDS6912
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 0.024 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.024 Ohms


Features:

• 6 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 V
                   RDS(ON) = 0.042 @ VGS = 4.5 V.
• Optimized for use in switching DC/DC converters with PWM controllers
• Very fast switching.
• Low gate charge



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Ratings
Units
VDSS Drain-Source Voltage
30
V
VGSS Gate-Source Voltage
±20
V
ID

Drain Current   Continuous (Note 1a)
              Pulsed
6
A
20
PD Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation (Note 1a)
                                      (Note 1b)
                                      (Note 1c)
1.6
1
0.9
TJ, TSTG Operating and Storage Junction Temperature Range
55 to +150
°C



Description

These FDS6912 N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs FDS6912 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDS6912
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs28 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 740pF @ 15V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs10nC @ 5V
Package / CaseSO-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6912
FDS6912



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