FDS6961A

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.09 Ohms
Continuous Drain Current : 3.5 A


Features:

3.5 A, 30 V. R_DS(ON) = 0.090 @ V_GS = 10 V
                      R_DS(ON) = 0.140 @ V_GS = 4.5 V.
Fast switching speed.
Low gate charge (2.1nC typical).
High performance trench technology for extremely low R_DS(ON).
High power and current handling capability.


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 1a)	3.5	A
	Pulsed	14
PD	Power Dissipation for Dual Operation	2	W
	Power Dissipation for Single Operation (Note 1a)	1.6
	(Note 1b)	1
	(Note 1c)	0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

These FDS6961A N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices FDS6961A are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parameters:

Technical/Catalog Information	FDS6961A
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	3.5A
Rds On (Max) @ Id, Vgs	90 mOhm @ 3.5, 10V
Input Capacitance (Ciss) @ Vds	220pF @ 15V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	4nC @ 5V
Package / Case	SO-8
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6961A FDS6961A FDS6961ADKR ND FDS6961ADKRND FDS6961ADKR