FDS6982S

MOSFET SO-8 DUAL N-CH

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FDS6982S Picture
SeekIC No. : 00163843 Detail

FDS6982S: MOSFET SO-8 DUAL N-CH

floor Price/Ceiling Price

Part Number:
FDS6982S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2021/1/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6.3 A, 8.6 A
Resistance Drain-Source RDS (on) : 0.016 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.016 Ohms
Continuous Drain Current : 6.3 A, 8.6 A


Features:

•  Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode
8.6A,  30V  = 0.016Ω @ VGS = 10V  R DS(on)
                  = 0.021Ω @ VGS = 4.5V R DS(on)

•  Q1: Optimized for low switching losses Low Gate Charge ( 8.5 nC typical)
6.3A,  30V   = 0.028Ω @ VGS = 10V RDS(on)
                   = 0.035Ω @ VGS = 4.5V RDS(on)




Pinout

  Connection Diagram


Specifications

Symbol Parameter Q2 Q1 Units
VDSS Drain-Source Voltage 30 30 V
VGSS Gate-Source Voltage ±20 ±16 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
8.6 6.3 A
30 20
PD Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)

1.6
1
0.9
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C



Description

The FDS6982S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.

The FDS6982S high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low- side switch (Q2) is optimized to reduce conduction losses.  Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.




Parameters:

Technical/Catalog InformationFDS6982S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6.3A, 8.6A
Rds On (Max) @ Id, Vgs28 mOhm @ 6.3A, 10V
Input Capacitance (Ciss) @ Vds 2040pF @ 10V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs12nC @ 5V
Package / CaseSO-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6982S
FDS6982S



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