FDS6994S

MOSFET NChannel PowerTrench Notebook Power

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SeekIC No. : 00149592 Detail

FDS6994S: MOSFET NChannel PowerTrench Notebook Power

floor Price/Ceiling Price

US $ .66~.98 / Piece | Get Latest Price
Part Number:
FDS6994S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.98
  • $.87
  • $.76
  • $.66
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 6.9 A, 8.2 A
Resistance Drain-Source RDS (on) : 0.015 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.015 Ohms
Continuous Drain Current : 6.9 A, 8.2 A


Features:

•  Q2:  Optimized to minimize conduction losses Includes SyncFET Schottky body diode 
   8.2A,  30V  = 15.0 mΩ @ VGS = 10V RDS(on) 
                     = 17.5 mΩ @ VGS = 4.5V RDS(on)
•  Q1:  Optimized for low switching losses Low gate charge (8.0 nC typical)
   6.9A,  30V  = 21.0 mΩ @ VGS = 10V RDS(on)
                     = 26.0 mΩ @ VGS = 4.5VRDS(on)



Pinout

  Connection Diagram


Specifications

Symbol Parameter Q2 Q1 Units
VDSS Drain-Source Voltage 30 30 V
VGSS Gate-Source Voltage ±16 ±16 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
8.2 6.9 A
30 20
PD Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)

1.6
1
0.9
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C



Description

The FDS6994S is designed to replace two single SO-8  MOSFETs and Schottky diode in synchronous DC:DC  power supplies that provide various peripheral voltages  for notebook computers and other battery powered  electronic devices. FDS6994S contains two unique  30V, N-channel, logic level, PowerTrench MOSFETs  designed to maximize power conversion efficiency.

The FDS6994S high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses.  Q2 also includes an integrated Schottky diode  using Fairchild's monolithic SyncFET technology.




Parameters:

Technical/Catalog InformationFDS6994S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6.9A, 8.2A
Rds On (Max) @ Id, Vgs21 mOhm @ 6.9A, 10V
Input Capacitance (Ciss) @ Vds 800pF @ 15V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs12nC @ 5V
Package / CaseSO-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6994S
FDS6994S



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