FDS7066N7

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.0035 Ohms
Configuration : Single Seven Source


Features:

• 23 A, 30 V _RDS(ON) = 4.5 mΩ @ V_GS = 10 V R_DS(ON) = 5.5 mΩ @ V_GS = 4.5 V
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size


Application

• Synchronous rectifier
• DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±16	V
ID	Drain Current Continuous (Note 1a)                        Pulsed	23	A
		60
PD	Power Dissipation for Single Operation (Note 1a)                                                               (Note 1b)	3.0	W
		1.7
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS7066N7 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low R_DS(ON) in a small package.



Parameters:

Technical/Catalog Information	FDS7066N7
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	23A
Rds On (Max) @ Id, Vgs	4.5 mOhm @ 23A, 10V
Input Capacitance (Ciss) @ Vds	4973pF @ 15V
Power - Max	1.7W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	69nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS7066N7 FDS7066N7 FDS7066N7CT ND FDS7066N7CTND FDS7066N7CT