FDS7079ZN3

Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8
Continuous Drain Current : - 16 A
Configuration : Single Triple Source
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.0075 Ohms


Features:

• 16 A, 30 V.    R_DS(ON) = 7.5 mΩ @ V_GS = 10 V
                             R_DS(ON) = 11.5 mΩ @ V_GS = 4.5 V
• ESD protection diode (note 3)
• ESD rating: 4kV
• High performance trench technology for extremely low RDS(ON)
• FLMP SO-8 package for enhanced thermal performance in industry-standard package size


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage	±25	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-16	A
		-60
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b)	3.13	W
		1.5
TJ, TSTG	Operating and Storage Junction Temperature Range	-55to+150	°C

Description

Advanced P Channel MOSFET FDS7079ZN3 combined with Advanced SO8 FLMP package providing a device with extremely low thermal impedance and improved electrical performance.

Applications for this device FDS7079ZN3 include multi-cell battery protection and charging, including protection and load switching in notebook computer and notebook battery packs.

Parameters:

Technical/Catalog Information	FDS7079ZN3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	3630pF @ 15V
Power - Max	1.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	55nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS7079ZN3 FDS7079ZN3 FDS7079ZN3TR ND FDS7079ZN3TRND FDS7079ZN3TR