FDS7082N3

MOSFET 30V N-Ch PowerTrench

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SeekIC No. : 00159718 Detail

FDS7082N3: MOSFET 30V N-Ch PowerTrench

floor Price/Ceiling Price

Part Number:
FDS7082N3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 17.5 A
Resistance Drain-Source RDS (on) : 0.006 Ohms Configuration : Single Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8
Configuration : Single Triple Source
Continuous Drain Current : 17.5 A
Resistance Drain-Source RDS (on) : 0.006 Ohms


Features:

• 17.5 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely low RDS(ON)
• Low Qg and Rg for fast switching
• FLMP SO-8 package for enhanced thermal performance in an industry-standard package outline.



Application

• Secondary side Synchronous rectifier
• Synchronous Buck VRM and POL Converters



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS


Drain-Source Voltage

30

V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1a)
                      Pulsed
17.5
A
60

PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
3.0
W
1.5
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C



Description

This FDS7082N3 N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to
improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for
synchronous rectifier applications in both isolated and non-isolated topologies. FDS7082N3 is also well suited for both
high and low side switch applications in Point of Load converters.


Parameters:

Technical/Catalog InformationFDS7082N3
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C17.5A
Rds On (Max) @ Id, Vgs6 mOhm @ 17.5A, 10V
Input Capacitance (Ciss) @ Vds 2271pF @ 15V
Power - Max1.5W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs53nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS7082N3
FDS7082N3
FDS7082N3CT ND
FDS7082N3CTND
FDS7082N3CT



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