FDS7766

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 17 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 4.2 m Ohms
Gate-Source Breakdown Voltage : +/- 16 V


Features:

• 17 A, 30 V R_DS(ON) = 5 mΩ @ V_GS = 10 V
                    R_DS(ON) = 6 mΩ @ V_GS = 4.5 V
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability
• Fast switching


Application

• Synchronous rectifier
• DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±16	V
ID	Drain Current Continuous (Note 1a)                        Pulsed	17	A
		60
PD	Power Dissipation for Single Operation (Note 1a)                                                               (Note 1b)                                                               (Note 1c)	2.5	W
		1.2
		1.0
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS7766 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. FDS7766 has been optimized for "low side" synchronous rectifier operation, providing an extremely low R_DS(ON) in a small package.